Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

Type
Article

Authors
Das, Ayan
Heo, Junseok
Jankowski, Marc
Guo, Wei
Zhang, Lei
Deng, Hui
Bhattacharya, Pallab

KAUST Grant Number
N012509-00

Date
2011-08-04

Abstract
We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.

Citation
Das A, Heo J, Jankowski M, Guo W, Zhang L, et al. (2011) Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser. Physical Review Letters 107. Available: http://dx.doi.org/10.1103/PhysRevLett.107.066405.

Acknowledgements
The work was supported by KAUST under Grant No. N012509-00. L. Z. acknowledges support by the NSF.

Publisher
American Physical Society (APS)

Journal
Physical Review Letters

DOI
10.1103/PhysRevLett.107.066405

PubMed ID
21902349

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