Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates
AuthorsOnyegam, Emmanuel U.
Hilali, Mohamed M.
Rao, Rajesh A.
Smith, Ryan S.
Banerjee, Sanjay K.
Permanent link to this recordhttp://hdl.handle.net/10754/599456
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AbstractSilicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.
CitationOnyegam EU, Sarkar D, Hilali MM, Saha S, Mathew L, et al. (2014) Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates. Applied Physics Letters 104: 153902. Available: http://dx.doi.org/10.1063/1.4871503.
SponsorsThe authors would like to thank William Jesse James for his technical support on the RPCVD. This work was funded partly by U.S. Department of Energy Sunshot Award No. DE-EE0005404, KAUST, and BAPVC program.
JournalApplied Physics Letters