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dc.contributor.authorTang, Jiang*
dc.contributor.authorLiu, Huan*
dc.contributor.authorZhitomirsky, David*
dc.contributor.authorHoogland, Sjoerd*
dc.contributor.authorWang, Xihua*
dc.contributor.authorFurukawa, Melissa*
dc.contributor.authorLevina, Larissa*
dc.contributor.authorSargent, Edward H.*
dc.date.accessioned2016-02-28T05:50:58Zen
dc.date.available2016-02-28T05:50:58Zen
dc.date.issued2012-09-12en
dc.identifier.citationTang J, Liu H, Zhitomirsky D, Hoogland S, Wang X, et al. (2012) Quantum Junction Solar Cells. Nano Lett 12: 4889–4894. Available: http://dx.doi.org/10.1021/nl302436r.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid22881834en
dc.identifier.doi10.1021/nl302436ren
dc.identifier.urihttp://hdl.handle.net/10754/599429en
dc.description.abstractColloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.en
dc.description.sponsorshipWe thank Angstrom Engineering and Innovative Technology for useful discussions regarding material deposition methods and control of glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.Z. acknowledges financial support through the NSERC CGS D Scholarship. The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectColloidal quantum dotsen
dc.subjecthomojunctionen
dc.subjectn-typeen
dc.subjectPbSen
dc.subjectphotovoltaicsen
dc.titleQuantum Junction Solar Cellsen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionWuhan National Laboratory for Optoelectronics, Wuhan, China*
dc.contributor.institutionHuazhong University of Science and Technology, Wuhan, China*
dc.contributor.institutionUniversity of Toronto, Toronto, Canada*
kaust.grant.numberKUS-11-009-21en


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