Type
ArticleAuthors
Tang, JiangLiu, Huan
Zhitomirsky, David
Hoogland, Sjoerd
Wang, Xihua
Furukawa, Melissa
Levina, Larissa
Sargent, Edward H.

KAUST Grant Number
KUS-11-009-21Date
2012-08-16Online Publication Date
2012-08-16Print Publication Date
2012-09-12Permanent link to this record
http://hdl.handle.net/10754/599429
Metadata
Show full item recordAbstract
Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.Citation
Tang J, Liu H, Zhitomirsky D, Hoogland S, Wang X, et al. (2012) Quantum Junction Solar Cells. Nano Lett 12: 4889–4894. Available: http://dx.doi.org/10.1021/nl302436r.Sponsors
We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material deposition methods and control of glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.Z. acknowledges financial support through the NSERC CGS D Scholarship. The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.Publisher
American Chemical Society (ACS)Journal
Nano LettersPubMed ID
22881834ae974a485f413a2113503eed53cd6c53
10.1021/nl302436r