Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals
Type
ArticleAuthors
Baumgardner, William J.Choi, Joshua J.
Bian, Kaifu
Fitting Kourkoutis, Lena
Smilgies, Detlef-M.
Thompson, Michael O.
Hanrath, Tobias
KAUST Grant Number
KUS-C1-018-02Date
2011-09-27Permanent link to this record
http://hdl.handle.net/10754/599415Metadata
Show full item recordAbstract
We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.Citation
Baumgardner WJ, Choi JJ, Bian K, Fitting Kourkoutis L, Smilgies D-M, et al. (2011) Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals. ACS Nano 5: 7010–7019. Available: http://dx.doi.org/10.1021/nn201588p.Sponsors
We thank Jan Koenig for providing bulk PbSe thin film samples. W.B. was supported by Award No. KUS-C1-018-02, made by King Abdullah University of Science and Technology (KAUST). K.B. was supported by NSF-CBET 0828703. J.J.C. was supported by the NSF IGERT Fellowship Program on "Nanoscale Control of Surfaces and Interfaces," administered by Cornell's MRSEC. We also acknowledge the Cornell Center for Materials Science (NSF DMR-0520404) and the Cornell High Energy Synchrotron Source (NSF DMR-09262384).Publisher
American Chemical Society (ACS)Journal
ACS NanoISSN
1936-08511936-086X