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dc.contributor.authorNoriega, Rodrigo
dc.contributor.authorRivnay, Jonathan
dc.contributor.authorGoris, Ludwig
dc.contributor.authorKälblein, Daniel
dc.contributor.authorKlauk, Hagen
dc.contributor.authorKern, Klaus
dc.contributor.authorThompson, Linda M.
dc.contributor.authorPalke, Aaron C.
dc.contributor.authorStebbins, Jonathan F.
dc.contributor.authorJokisaari, Jacob R.
dc.contributor.authorKusinski, Greg
dc.contributor.authorSalleo, Alberto
dc.date.accessioned2016-02-28T05:50:33Z
dc.date.available2016-02-28T05:50:33Z
dc.date.issued2010-04-16
dc.identifier.citationNoriega R, Rivnay J, Goris L, Kälblein D, Klauk H, et al. (2010) Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles. Journal of Applied Physics 107: 074312. Available: http://dx.doi.org/10.1063/1.3360930.
dc.identifier.issn0021-8979
dc.identifier.doi10.1063/1.3360930
dc.identifier.urihttp://hdl.handle.net/10754/599407
dc.description.abstractThe analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.
dc.description.sponsorshipThis research was supported by the King Abdullah University of Science and Technology (KAUST) : Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative). We thank Ted Trigg for his collaboration and Craig H. Peters for helpful discussions in preparing this manuscript.
dc.publisherAIP Publishing
dc.titleProbing the electrical properties of highly-doped Al:ZnO nanowire ensembles
dc.typeArticle
dc.identifier.journalJournal of Applied Physics
dc.contributor.institutionStanford University, Palo Alto, United States
dc.contributor.institutionMax Planck Institute for Solid State Research, Stuttgart, Germany
dc.contributor.institutionEcole Polytechnique Federale de Lausanne, Lausanne, Switzerland
dc.contributor.institutionClemson University, Clemson, United States
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)
dc.date.published-online2010-04-16
dc.date.published-print2010-04


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