Show simple item record

dc.contributor.authorLu, Ming-Pei
dc.contributor.authorSong, Jinhui
dc.contributor.authorLu, Ming-Yen
dc.contributor.authorChen, Min-Teng
dc.contributor.authorGao, Yifan
dc.contributor.authorChen, Lih-Juann
dc.contributor.authorWang, Zhong Lin
dc.date.accessioned2016-02-25T13:54:38Z
dc.date.available2016-02-25T13:54:38Z
dc.date.issued2009-03-11
dc.identifier.citationLu M-P, Song J, Lu M-Y, Chen M-T, Gao Y, et al. (2009) Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays. Nano Lett 9: 1223–1227. Available: http://dx.doi.org/10.1021/nl900115y.
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid19209870
dc.identifier.doi10.1021/nl900115y
dc.identifier.urihttp://hdl.handle.net/10754/599193
dc.description.abstractUsing phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.
dc.description.sponsorshipResearch supported by DARPA (Army/AMCOMIREDSTONE AR, W31P4Q-08-1-0009), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, and National Science Council (NSC 97-2120-M007-003). Thanks to Chen Xu and Chun-Chi Chen for technical assistance.
dc.publisherAmerican Chemical Society (ACS)
dc.titlePiezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays
dc.typeArticle
dc.identifier.journalNano Letters
dc.contributor.institutionNational Nano Device Laboratories Taiwan, Hsin-chu, Taiwan
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United States
dc.contributor.institutionNational Tsing Hua University, Hsin-chu, Taiwan


This item appears in the following Collection(s)

Show simple item record