Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

Abstract
DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.

Citation
Chakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.

Acknowledgements
The authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.

Publisher
SPIE-Intl Soc Optical Eng

Journal
Extreme Ultraviolet (EUV) Lithography IV

DOI
10.1117/12.2011490

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