Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
Giannelis, Emmanuel P.
Ober, Christopher K.
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AbstractDUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.
CitationChakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.
SponsorsThe authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.
PublisherSPIE-Intl Soc Optical Eng