Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
Type
Conference PaperAuthors
Chakrabarty, SouvikOuyang, Christine
Krysak, Marie
Trikeriotis, Markos
Cho, Kyoungyoung
Giannelis, Emmanuel P.
Ober, Christopher K.
Date
2013-04-01Permanent link to this record
http://hdl.handle.net/10754/599125
Metadata
Show full item recordAbstract
DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.Citation
Chakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.Sponsors
The authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.Publisher
SPIE-Intl Soc Optical Engae974a485f413a2113503eed53cd6c53
10.1117/12.2011490