Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Leonard, J. T.; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Lee, S.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Type

Article

Authors

Leonard, J. T.

Yonkee, B. P.
Cohen, D. A.
Megalini, L.

Lee, S.

Speck, J. S.
DenBaars, S. P.

Nakamura, S.

Date

2016-01-18

Citation

Leonard JT, Yonkee BP, Cohen DA, Megalini L, Lee S, et al. (2016) Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture. Applied Physics Letters 108: 031111. Available: http://dx.doi.org/10.1063/1.4940380.

Acknowledgements

The authors would like to thank Mitsubishi Chemical Corporation for providing high-quality free-standing m-plane GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Partial funding for this work came from Professor Boon S. Ooi at King Abdullah University of Science and Technology (KAUST), through his participation in the KACST-TIC program. A portion of this work was done in the UCSB nanofabrication facility, with the support from the NSF NNIN network (ECS-03357650), the UCSB Materials Research Laboratory (MRL), which was supported by the NSF MRSEC program (DMR-1121053), and the California NanoSystem Institute's (CNSIs) Center for Scientific Computing at UCSB.