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dc.contributor.authorKryask, Marie
dc.contributor.authorTrikeriotis, Markos
dc.contributor.authorOuyang, Christine
dc.contributor.authorChakrabarty, Sovik
dc.contributor.authorGiannelis, Emmanuel P.
dc.contributor.authorOber, Christopher K.
dc.date.accessioned2016-02-25T13:44:08Z
dc.date.available2016-02-25T13:44:08Z
dc.date.issued2013
dc.identifier.citationKryask M, Trikeriotis M, Ouyang C, Chakrabarty S, Giannelis EP, et al. (2013) Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism. Journal of Photopolymer Science and Technology 26: 659–664. Available: http://dx.doi.org/10.2494/photopolymer.26.659.
dc.identifier.issn0914-9244
dc.identifier.issn1349-6336
dc.identifier.doi10.2494/photopolymer.26.659
dc.identifier.urihttp://hdl.handle.net/10754/598941
dc.description.abstractHybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.
dc.description.sponsorshipThe authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure.
dc.publisherTechnical Association of Photopolymers, Japan
dc.subjectDual tone patterning
dc.subjectLigand exchange
dc.subjectLithography
dc.subjectNanoparticle photoresist
dc.titleNanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism
dc.typeArticle
dc.identifier.journalJournal of Photopolymer Science and Technology
dc.contributor.institutionCornell University, Ithaca, United States
kaust.acknowledged.supportUnitKAUST-Cornell Center of Energy and Sustainability


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