Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism
Giannelis, Emmanuel P.
Ober, Christopher K.
Permanent link to this recordhttp://hdl.handle.net/10754/598941
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AbstractHybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.
CitationKryask M, Trikeriotis M, Ouyang C, Chakrabarty S, Giannelis EP, et al. (2013) Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism. Journal of Photopolymer Science and Technology 26: 659–664. Available: http://dx.doi.org/10.2494/photopolymer.26.659.
SponsorsThe authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure.