Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene
KAUST Grant NumberKUS-C1-015-21
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AbstractDefects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.
CitationDacuña J, Desai A, Xie W, Salleo A (2014) Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene. Physical Review B 89. Available: http://dx.doi.org/10.1103/PhysRevB.89.245302.
SponsorsThis paper was based on work supported by the Center for Advanced Molecular Photovoltaics (Award No. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). We would like to thank Professor Daniel Frisbie for providing the materials used in this work.
PublisherAmerican Physical Society (APS)
JournalPhysical Review B