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    Metal Oxide Nanoparticle Photoresists for EUV Patterning

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    Type
    Article
    Authors
    Jiang, Jing
    Chakrabarty, Souvik
    Yu, Mufei
    Ober, Christopher K.
    Date
    2014
    Permanent link to this record
    http://hdl.handle.net/10754/598812
    
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    Abstract
    © 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.
    Citation
    Jiang J, Chakrabarty S, Yu M, Ober CK (2014) Metal Oxide Nanoparticle Photoresists for EUV Patterning. Journal of Photopolymer Science and Technology 27: 663–666. Available: http://dx.doi.org/10.2494/photopolymer.27.663.
    Sponsors
    The authors gratefully acknowledgeSEMATECH for funding, as well as the CornellNanoscale Science and Technology Facility(CNF), Cornell Center of Materials Research(CCMR), the Nanobiotechnology Center (NBTC)and the KAUST-Cornell Center of Energy andSustainability (KAUST_CU) and LawrenceBerkeley National Lab (LBNL) for use of theirfacilities.
    Publisher
    Technical Association of Photopolymers, Japan
    Journal
    Journal of Photopolymer Science and Technology
    DOI
    10.2494/photopolymer.27.663
    ae974a485f413a2113503eed53cd6c53
    10.2494/photopolymer.27.663
    Scopus Count
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