Type
ArticleDate
2014Permanent link to this record
http://hdl.handle.net/10754/598812
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© 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.Citation
Jiang J, Chakrabarty S, Yu M, Ober CK (2014) Metal Oxide Nanoparticle Photoresists for EUV Patterning. Journal of Photopolymer Science and Technology 27: 663–666. Available: http://dx.doi.org/10.2494/photopolymer.27.663.Sponsors
The authors gratefully acknowledgeSEMATECH for funding, as well as the CornellNanoscale Science and Technology Facility(CNF), Cornell Center of Materials Research(CCMR), the Nanobiotechnology Center (NBTC)and the KAUST-Cornell Center of Energy andSustainability (KAUST_CU) and LawrenceBerkeley National Lab (LBNL) for use of theirfacilities.ae974a485f413a2113503eed53cd6c53
10.2494/photopolymer.27.663