Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells
KAUST Grant NumberKUK-C1-013-04
Permanent link to this recordhttp://hdl.handle.net/10754/598770
MetadataShow full item record
AbstractIn screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.
CitationBlack JP, Breward CJW, Howell PD, Young RJS (2013) Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells. SIAM Journal on Applied Mathematics 73: 1906–1925. Available: http://dx.doi.org/10.1137/130911974.
SponsorsReceived by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST).