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    Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

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    Type
    Article
    Authors
    Black, J. P.
    Breward, C. J. W.
    Howell, P. D.
    Young, R. J. S.
    KAUST Grant Number
    KUK-C1-013-04
    Date
    2013-10-22
    Online Publication Date
    2013-10-22
    Print Publication Date
    2013-01
    Permanent link to this record
    http://hdl.handle.net/10754/598770
    
    Metadata
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    Abstract
    In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.
    Citation
    Black JP, Breward CJW, Howell PD, Young RJS (2013) Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells. SIAM Journal on Applied Mathematics 73: 1906–1925. Available: http://dx.doi.org/10.1137/130911974.
    Sponsors
    Received by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST).
    Publisher
    Society for Industrial & Applied Mathematics (SIAM)
    Journal
    SIAM Journal on Applied Mathematics
    DOI
    10.1137/130911974
    ae974a485f413a2113503eed53cd6c53
    10.1137/130911974
    Scopus Count
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    Publications Acknowledging KAUST Support

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