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    Lateral nanowire/nanobelt based nanogenerators, piezotronics and piezo-phototronics

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    Type
    Article
    Authors
    Wang, Zhong Lin cc
    Yang, Rusen
    Zhou, Jun
    Qin, Yong
    Xu, Chen
    Hu, Youfan
    Xu, Sheng
    Date
    2010-11
    Permanent link to this record
    http://hdl.handle.net/10754/598702
    
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    Abstract
    Relying on the piezopotential created in ZnO under straining, nanogenerators, piezotronics and piezo-phototronics developed based on laterally bonded nanowires on a polymer substrate have been reviewed. The principle of the nanogenerator is a transient flow of electrons in external load as driven by the piezopotential created by dynamic straining. By integrating the contribution made by millions of nanowires, the output voltage has been raised to 1.2 V. Consequently, self-powered nanodevices have been demonstrated. This is an important platform technology for the future sensor network and the internet of things. Alternatively, the piezopotential can act as a gate voltage that can tune/gate the transport process of the charge carriers in the nanowire, which is a gate-electrode free field effect transistor (FET). The device fabricated based on this principle is called the piezotronic device. Piezo-phototronic effect is about the tuning and controlling of electro-optical processes by strain induced piezopotential. The piezotronic, piezophotonic and pieozo-phototronic devices are focused on low frequency applications in areas involving mechanical actions, such as MEMS/NEMS, nanorobotics, sensors, actuators and triggers. © 2010 Elsevier B.V. All rights reserved.
    Citation
    Wang ZL, Yang R, Zhou J, Qin Y, Xu C, et al. (2010) Lateral nanowire/nanobelt based nanogenerators, piezotronics and piezo-phototronics. Materials Science and Engineering: R: Reports 70: 320–329. Available: http://dx.doi.org/10.1016/j.mser.2010.06.015.
    Sponsors
    Research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST Global Research Partnership, and NSF (DMS0706436, CMMI 0403671). We thank the contributions made by Drs. Zhiyuan Gao, Yaguang Wei, Cheng Li, Jinhui Song, Peng Fei, Yudong Gu, Zhou Li, Guang Zhu and Yue Shen.
    Publisher
    Elsevier BV
    Journal
    Materials Science and Engineering: R: Reports
    DOI
    10.1016/j.mser.2010.06.015
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.mser.2010.06.015
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