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dc.contributor.authorRyu, Sang-Gil
dc.contributor.authorGruber, Ivan
dc.contributor.authorGrigoropoulos, Costas P.
dc.contributor.authorPoulikakos, Dimos
dc.contributor.authorMoon, Seung-Jae
dc.date.accessioned2016-02-25T13:34:34Z
dc.date.available2016-02-25T13:34:34Z
dc.date.issued2012-09
dc.identifier.citationRyu S-G, Gruber I, Grigoropoulos CP, Poulikakos D, Moon S-J (2012) Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses. Thin Solid Films 520: 6724–6729. Available: http://dx.doi.org/10.1016/j.tsf.2012.07.052.
dc.identifier.issn0040-6090
dc.identifier.doi10.1016/j.tsf.2012.07.052
dc.identifier.urihttp://hdl.handle.net/10754/598694
dc.description.abstractThis paper presents a pulsed laser crystallization technique, enabling large area crystallization of amorphous Si to produce grains having well-defined size and orientation. The method is developed by first determining the parameters influencing crystallization induced by single laser pulses of circular cross-sectional profile. In a second step, crystallization by overlapping round spots is examined. The experiments reveal three zones characterized by distinctly different crystallized morphologies following the laser irradiation. One of these zones corresponds to the regime of lateral crystal growth, wherein grains are driven towards the center of the spot by the radial temperature gradient. These findings are then applied to processing via line beam profiles that facilitate large area crystallization upon rapid translation of the specimen. Crystallization of extended areas hinges on the determination of the crystal growth length for a single spot. The pitch between successive pulses is then set on the basis of this information. It is shown that the pulse energy has only a weak effect on the crystal growth length. © 2012 Elsevier B.V.
dc.description.sponsorshipThis work was supported by a grant to CPG by the King Abdullah University of Science and Technology (KAUST).
dc.publisherElsevier BV
dc.subjectAtomic force microscopy
dc.subjectLarge area annealing
dc.subjectLaser crystallization
dc.subjectLateral growth
dc.subjectSilicon
dc.subjectThin films
dc.titleLarge area crystallization of amorphous Si with overlapping high repetition rate laser pulses
dc.typeArticle
dc.identifier.journalThin Solid Films
dc.contributor.institutionUC Berkeley, Berkeley, United States
dc.contributor.institutionEidgenossische Technische Hochschule Zurich, Zurich, Switzerland
dc.contributor.institutionHanyang University, Seoul, South Korea


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