Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots
AuthorsKemp, Kyle W.
Labelle, Andre J.
Thon, Susanna M.
Ip, Alexander H.
Kramer, Illan J.
Sargent, Edward H.
KAUST Grant NumberKUS-11-009-21
Online Publication Date2013-03-26
Print Publication Date2013-07
Permanent link to this recordhttp://hdl.handle.net/10754/598651
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AbstractInterface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CitationKemp KW, Labelle AJ, Thon SM, Ip AH, Kramer IJ, et al. (2013) Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots. Adv Energy Mater 3: 917–922. Available: http://dx.doi.org/10.1002/aenm.201201083.
SponsorsThis publication is based, in part, on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. K. W. K acknowledges support from the Ontario Graduate Scholarship (OGS) program. We thank Angstrom Engineering Inc., Cambridge Nanotech, and Innovative Technology Inc. for useful discussions regarding material deposition methods and control of the glovebox environment, respectively.
JournalAdvanced Energy Materials