In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory
KAUST Grant NumberKUS-I1-001-12
Online Publication Date2011-03-28
Print Publication Date2011-04-26
Permanent link to this recordhttp://hdl.handle.net/10754/598598
MetadataShow full item record
AbstractPhase-change memory (PCM) has been researched extensively as a promising alternative to flash memory. Important studies have focused on its scalability, switching speed, endurance, and new materials. Still, reliability issues and inconsistent switching in PCM devices motivate the need to further study its fundamental properties. However, many investigations treat PCM cells as black boxes; nanostructural changes inside the devices remain hidden. Here, using in situ transmission electron microscopy, we observe real-time nanostructural changes in lateral Ge2Sb2Te5 (GST) PCM bridges during switching. We find that PCM devices with similar resistances can exhibit distinct threshold switching behaviors due to the different initial distribution of nanocrystalline and amorphous domains, explaining variability of switching behaviors of PCM cells in the literature. Our findings show a direct correlation between nanostructure and switching behavior, providing important guidelines in the design and operation of future PCM devices with improved endurance and lower variability. © 2011 American Chemical Society.
CitationMeister S, Kim S, Cha JJ, Wong H-SP, Cui Y (2011) In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory . ACS Nano 5: 2742–2748. Available: http://dx.doi.org/10.1021/nn1031356.
SponsorsY.C. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12) and from the Stanford Nonvolatile Memory Technology Research Initiative.
PublisherAmerican Chemical Society (ACS)
CollectionsPublications Acknowledging KAUST Support
- Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory.
- Authors: Xia M, Zhu M, Wang Y, Song Z, Rao F, Wu L, Cheng Y, Song S
- Issue date: 2015 Apr 15
- Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures.
- Authors: Loke D, Shi L, Wang W, Zhao R, Yang H, Ng LT, Lim KG, Chong TC, Yeo YC
- Issue date: 2011 Jun 24
- "Stickier"-Surface Sb<sub>2</sub>Te<sub>3</sub> Templates Enable Fast Memory Switching of Phase Change Material GeSb<sub>2</sub>Te<sub>4</sub> with Growth-Dominated Crystallization.
- Authors: Feng J, Lotnyk A, Bryja H, Wang X, Xu M, Lin Q, Cheng X, Xu M, Tong H, Miao X
- Issue date: 2020 Jul 22
- Chalcogenide phase-change memory nanotubes for lower writing current operation.
- Authors: Jung Y, Agarwal R, Yang CY, Agarwal R
- Issue date: 2011 Jun 24
- Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory.
- Authors: Huang YT, Huang CW, Chen JY, Ting YH, Lu KC, Chueh YL, Wu WW
- Issue date: 2014 Sep 23