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dc.contributor.authorLin, Ronghui
dc.contributor.authorSong, J H
dc.contributor.authorLu, Y F
dc.contributor.authorWang, Z L
dc.date.accessioned2016-02-25T13:32:02Z
dc.date.available2016-02-25T13:32:02Z
dc.date.issued2009-08-18
dc.identifier.citationLin SS, Song JH, Lu YF, Wang ZL (2009) Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator. Nanotechnology 20: 365703. Available: http://dx.doi.org/10.1088/0957-4484/20/36/365703.
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.pmid19687547
dc.identifier.doi10.1088/0957-4484/20/36/365703
dc.identifier.urihttp://hdl.handle.net/10754/598552
dc.description.abstractBased on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.
dc.description.sponsorshipResearch supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, NSF (DMS 0706436, CMMI 0403671). SSL gratefully acknowledges the fellowship from China Scholarship Council (CSC) (No. 2008632026). We thank Dr Jung-il Hong for his guidance in PLD synthesis.
dc.publisherIOP Publishing
dc.titleIdentifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator
dc.typeArticle
dc.identifier.journalNanotechnology
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United States
dc.contributor.institutionState Key Laboratory of Silicon Material Science, Hangzhou, China


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