High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors
Online Publication Date2011-06-24
Print Publication Date2011-10
Permanent link to this recordhttp://hdl.handle.net/10754/598475
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AbstractWe explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
CitationHuang R-G, Tham D, Wang D, Heath JR (2011) High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors. Nano Research 4: 1005–1012. Available: http://dx.doi.org/10.1007/s12274-011-0157-2.
SponsorsThe authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy (DE-FG02-04ER46175). D. Tham gratefully acknowledges support by the KAUST Scholar Award.