Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation
Type
ArticleDate
2010-08-23Online Publication Date
2010-08-23Print Publication Date
2010-10-22Permanent link to this record
http://hdl.handle.net/10754/598451
Metadata
Show full item recordAbstract
A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Citation
Yuan D, Guo R, Wei Y, Wu W, Ding Y, et al. (2010) Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation. Advanced Functional Materials 20: 3484–3489. Available: http://dx.doi.org/10.1002/adfm.201001058.Sponsors
D. Yuan and R. Guo contributed equally to this work. Research was supported by the Georgia Institute of Technology, DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08–1–0009), BES DOE (DE-FG02–07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), and the MANA WPI program from NIMS, Japan.Publisher
WileyJournal
Advanced Functional Materialsae974a485f413a2113503eed53cd6c53
10.1002/adfm.201001058