Show simple item record

dc.contributor.authorQin, Yong
dc.contributor.authorYang, Rusen
dc.contributor.authorWang, Zhong Lin
dc.date.accessioned2016-02-25T13:20:44Z
dc.date.available2016-02-25T13:20:44Z
dc.date.issued2008-12-04
dc.identifier.citationQin Y, Yang R, Wang ZL (2008) Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate. The Journal of Physical Chemistry C 112: 18734–18736. Available: http://dx.doi.org/10.1021/jp808869j.
dc.identifier.issn1932-7447
dc.identifier.issn1932-7455
dc.identifier.doi10.1021/jp808869j
dc.identifier.urihttp://hdl.handle.net/10754/598439
dc.description.abstractA general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.
dc.description.sponsorshipThis research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), DARPA STTR with Magnolia Optical Inc., BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, National Institute For Materials, Japan, Emory-Georgia Tech CCNE from NIH, NSF (DMS 0706436, CMMI 0403671).
dc.publisherAmerican Chemical Society (ACS)
dc.titleGrowth of Horizonatal ZnO Nanowire Arrays on Any Substrate
dc.typeArticle
dc.identifier.journalThe Journal of Physical Chemistry C
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United States
dc.contributor.institutionLanzhou University, Lanzhou, China


This item appears in the following Collection(s)

Show simple item record