KAUST Grant NumberKUS-11-009-21
Online Publication Date2012-05-10
Print Publication Date2012-06-13
Permanent link to this recordhttp://hdl.handle.net/10754/598425
MetadataShow full item record
AbstractMultijunction devices consist of a stack of semiconductor junctions having bandgaps tuned across a broad spectrum. In solar cells this concept is used to increase the efficiency of photovoltaic harvesting, while light emitters and detectors use it to achieve multicolor and spectrally tunable behavior. In series-connected current-matched multijunction devices, the recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We recently reported a tandem solar cell in which the recombination layer was implemented using a progression of n-type oxides whose doping densities and work functions serve to connect, with negligible resistive loss at solar current densities, the constituent cells. Here we present the generalized conditions for design of efficient graded recombination layer solar devices. We report the number of interlayers and the requirements on work function and doping of each interlayer, to bridge an work function difference as high as 1.6 eV. We also find solutions that minimize the doping required of the interlayers in order to minimize optical absorption due to free carriers in the graded recombination layer (GRL). We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the interlayers. © 2012 American Chemical Society.
CitationKoleilat GI, Wang X, Sargent EH (2012) Graded Recombination Layers for Multijunction Photovoltaics. Nano Lett 12: 3043–3049. Available: http://dx.doi.org/10.1021/nl300891h.
SponsorsThis publication is based in part on work supported by an award (no. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, and by Angstrom Engineering and Innovative Technology. The authors would also like to acknowledge the assistance of Larissa Levina, Armin Fisher, Elenita Palmiano, Remigiusz Wolowiec, and Damir Kopilovic. G.I.K. acknowledges NSERC support in the form of Alexander Graham Bell Canada Graduate Scholarship. X.W. was partially supported by an Ontario Post Doctoral Fellowship from the Ontario Ministry of Research and Innovation.
PublisherAmerican Chemical Society (ACS)
CollectionsPublications Acknowledging KAUST Support
- Improvement of external quantum efficiency depressed by visible light-absorbing hole transport material in solid-state semiconductor-sensitized heterojunction solar cells.
- Authors: Lim CS, Im SH, Chang JA, Lee YH, Kim HJ, Seok SI
- Issue date: 2012 Jan 21
- Quantum junction solar cells.
- Authors: Tang J, Liu H, Zhitomirsky D, Hoogland S, Wang X, Furukawa M, Levina L, Sargent EH
- Issue date: 2012 Sep 12
- Toward interaction of sensitizer and functional moieties in hole-transporting materials for efficient semiconductor-sensitized solar cells.
- Authors: Im SH, Lim CS, Chang JA, Lee YH, Maiti N, Kim HJ, Nazeeruddin MK, Grätzel M, Seok SI
- Issue date: 2011 Nov 9
- Design of nanostructured solar cells using coupled optical and electrical modeling.
- Authors: Deceglie MG, Ferry VE, Alivisatos AP, Atwater HA
- Issue date: 2012 Jun 13
- Multiscale transparent electrode architecture for efficient light management and carrier collection in solar cells.
- Authors: Boccard M, Battaglia C, Hänni S, Söderström K, Escarré J, Nicolay S, Meillaud F, Despeisse M, Ballif C
- Issue date: 2012 Mar 14