Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field

Type
Conference Paper

Authors
Bhattacharya, Pallab
Das, Ayan
Jankowski, Marc
Bhowmick, Sishir
Lee, Chi-Sen
Jahangir, Shafat

KAUST Grant Number
N012509-00

Date
2012

Abstract
Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.

Citation
Bhattacharya P, Das A, Jankowski M, Bhowmick S, Lee C-S, et al. (2012) Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field. Conference on Lasers and Electro-Optics 2012. Available: http://dx.doi.org/10.1364/qels.2012.qm1g.4.

Acknowledgements
Work supported by AFOSR (Grant FA9550-09-1-0634) and KAUST (Grant N012509-00).

Publisher
The Optical Society

Journal
Conference on Lasers and Electro-Optics 2012

DOI
10.1364/qels.2012.qm1g.4

Permanent link to this record
http://hdl.handle.net/10754/598129
Collections
Publications Acknowledging KAUST Support