Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field
KAUST Grant NumberN012509-00
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AbstractSuppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.
CitationBhattacharya P, Das A, Jankowski M, Bhowmick S, Lee C-S, et al. (2012) Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field. Conference on Lasers and Electro-Optics 2012. Available: http://dx.doi.org/10.1364/qels.2012.qm1g.4.
SponsorsWork supported by AFOSR (Grant FA9550-09-1-0634) and KAUST (Grant N012509-00).
PublisherThe Optical Society