Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field
Type
Conference PaperKAUST Grant Number
N012509-00Date
2012Permanent link to this record
http://hdl.handle.net/10754/598129
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Show full item recordAbstract
Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.Citation
Bhattacharya P, Das A, Jankowski M, Bhowmick S, Lee C-S, et al. (2012) Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field. Conference on Lasers and Electro-Optics 2012. Available: http://dx.doi.org/10.1364/qels.2012.qm1g.4.Sponsors
Work supported by AFOSR (Grant FA9550-09-1-0634) and KAUST (Grant N012509-00).Publisher
The Optical Societyae974a485f413a2113503eed53cd6c53
10.1364/qels.2012.qm1g.4