Show simple item record

dc.contributor.authorKundhikanjana, Worasom
dc.contributor.authorLai, Keji
dc.contributor.authorKelly, Michael A.
dc.contributor.authorShen, Zhi-Xun
dc.date.accessioned2016-02-25T12:58:37Z
dc.date.available2016-02-25T12:58:37Z
dc.date.issued2011-03-04
dc.identifier.citationKundhikanjana W, Lai K, Kelly MA, Shen Z-X (2011) Cryogenic microwave imaging of metal–insulator transition in doped silicon. Review of Scientific Instruments 82: 033705. Available: http://dx.doi.org/10.1063/1.3554438.
dc.identifier.issn0034-6748
dc.identifier.pmid21456749
dc.identifier.doi10.1063/1.3554438
dc.identifier.urihttp://hdl.handle.net/10754/597903
dc.description.abstractWe report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.
dc.description.sponsorshipThis research is funded by Center of Probing the Nanoscale (CPN), Stanford University, National Science Foundation (NSF) Gran No. DMR-0906027, and (U.S.) Department of Energy (DOE) Contract No. DE-FG03-01ER45929-A011 for low temperature cryostat. This publication is also based on work supported by Award No. KUS-F1-033-02, made by King Abdullah University of Science and Technology (KAUST) under the global research partnership (GRP) program. CPN is an NSF NSEC,National Science Foundation (NSF) Grant No. PHY-0425897.
dc.publisherAIP Publishing
dc.titleCryogenic microwave imaging of metal–insulator transition in doped silicon
dc.typeArticle
dc.identifier.journalReview of Scientific Instruments
dc.contributor.institutionGeballe Laboratory for Advanced Materials, Stanford, United States
kaust.grant.numberKUS-F1-033-02
dc.date.published-online2011-03-04
dc.date.published-print2011-03


This item appears in the following Collection(s)

Show simple item record