Colloidal quantum dot photodetectors

Type
Article

Authors
Konstantatos, Gerasimos
Sargent, Edward H.

KAUST Grant Number
KUS-11-009-21

Date
2011-05

Abstract
We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.

Citation
Konstantatos G, Sargent EH (2011) Colloidal quantum dot photodetectors. Infrared Physics & Technology 54: 278–282. Available: http://dx.doi.org/10.1016/j.infrared.2010.12.029.

Acknowledgements
This publication is based in part on work supported by Award No. KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST). We also acknowledge the Natural Sciences and Engineering Research Council of Canada (NSERC I2I Programme), the Ontario Centers of Excellence; the Canada Foundation for Innovation and Ontario Innovation Trust; and the Canada Research Chairs.

Publisher
Elsevier BV

Journal
Infrared Physics & Technology

DOI
10.1016/j.infrared.2010.12.029

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