Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
Online Publication Date2014-09-16
Print Publication Date2014-09-15
Permanent link to this recordhttp://hdl.handle.net/10754/597736
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Abstract© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.
CitationMarcinkevičius S, Gelžinytė K, Zhao Y, Nakamura S, DenBaars SP, et al. (2014) Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence. Applied Physics Letters 105: 111108. Available: http://dx.doi.org/10.1063/1.4896034.
SponsorsThe research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The research at UCSB was supported by the Solid State Lighting and Energy Electronic Center (SSLEEC) and by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
JournalApplied Physics Letters