Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes
| dc.contributor.author | Guo, Wei | |
| dc.contributor.author | Banerjee, Animesh | |
| dc.contributor.author | Zhang, Meng | |
| dc.contributor.author | Bhattacharya, Pallab | |
| dc.date.accessioned | 2016-02-25T12:43:37Z | |
| dc.date.available | 2016-02-25T12:43:37Z | |
| dc.date.issued | 2011-05-06 | |
| dc.identifier.citation | Guo W, Banerjee A, Zhang M, Bhattacharya P (2011) Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes. Applied Physics Letters 98: 183116. Available: http://dx.doi.org/10.1063/1.3579143. | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.doi | 10.1063/1.3579143 | |
| dc.identifier.uri | http://hdl.handle.net/10754/597644 | |
| dc.description.abstract | The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics. | |
| dc.description.sponsorship | The work was supported by KAUST under Grant No. N012509-00. | |
| dc.publisher | AIP Publishing | |
| dc.title | Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes | |
| dc.type | Article | |
| dc.identifier.journal | Applied Physics Letters | |
| dc.contributor.institution | University Michigan Ann Arbor, Ann Arbor, United States | |
| kaust.grant.number | N012509-00 | |
| dc.date.published-online | 2011-05-06 | |
| dc.date.published-print | 2011-05-02 |