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dc.contributor.authorGuo, Wei
dc.contributor.authorBanerjee, Animesh
dc.contributor.authorZhang, Meng
dc.contributor.authorBhattacharya, Pallab
dc.date.accessioned2016-02-25T12:43:37Z
dc.date.available2016-02-25T12:43:37Z
dc.date.issued2011-05-06
dc.identifier.citationGuo W, Banerjee A, Zhang M, Bhattacharya P (2011) Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes. Applied Physics Letters 98: 183116. Available: http://dx.doi.org/10.1063/1.3579143.
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.3579143
dc.identifier.urihttp://hdl.handle.net/10754/597644
dc.description.abstractThe barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.
dc.description.sponsorshipThe work was supported by KAUST under Grant No. N012509-00.
dc.publisherAIP Publishing
dc.titleBarrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes
dc.typeArticle
dc.identifier.journalApplied Physics Letters
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United States
kaust.grant.numberN012509-00
dc.date.published-online2011-05-06
dc.date.published-print2011-05-02


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