Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes
KAUST Grant NumberN012509-00
Permanent link to this recordhttp://hdl.handle.net/10754/597644
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AbstractThe barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.
CitationGuo W, Banerjee A, Zhang M, Bhattacharya P (2011) Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes. Applied Physics Letters 98: 183116. Available: http://dx.doi.org/10.1063/1.3579143.
SponsorsThe work was supported by KAUST under Grant No. N012509-00.
JournalApplied Physics Letters