Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
KAUST Grant NumberN012509-00
Permanent link to this recordhttp://hdl.handle.net/10754/597634
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AbstractWe have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1×1011 cm-2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger coefficient at low excitation, are 6.1 × 10-32 and 4.1×10-33 cm6·s-1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm 2. © 2011 American Chemical Society.
CitationGuo W, Zhang M, Bhattacharya P, Heo J (2011) Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics. Nano Lett 11: 1434–1438. Available: http://dx.doi.org/10.1021/nl103649d.
SponsorsThe work was supported by KAUST under Grant N012509-00.
PublisherAmerican Chemical Society (ACS)
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