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dc.contributor.authorZhang, Meng
dc.contributor.authorBanerjee, Animesh
dc.contributor.authorLee, Chi-Sen
dc.contributor.authorHinckley, John M.
dc.contributor.authorBhattacharya, Pallab
dc.date.accessioned2016-02-25T12:30:00Z
dc.date.available2016-02-25T12:30:00Z
dc.date.issued2011-06-03
dc.identifier.citationZhang M, Banerjee A, Lee C-S, Hinckley JM, Bhattacharya P (2011) A InGaN/GaN quantum dot green (λ=524 nm) laser. Applied Physics Letters 98: 221104. Available: http://dx.doi.org/10.1063/1.3596436.
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.3596436
dc.identifier.urihttp://hdl.handle.net/10754/597293
dc.description.abstractThe characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.
dc.description.sponsorshipThe work was supported by KAUST under Grant No. N012509-00.
dc.publisherAIP Publishing
dc.titleA InGaN/GaN quantum dot green (λ=524 nm) laser
dc.typeArticle
dc.identifier.journalApplied Physics Letters
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United States
kaust.grant.numberN012509-00
dc.date.published-online2011-06-03
dc.date.published-print2011-05-30


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