77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

Type
Conference Paper

Authors
Sallam, M. O.
Soliman, E. A.
Hassan, S.
El Katteb, O.
Sedky, S.

KAUST Grant Number
UK-C0015

Date
2011-07

Abstract
Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

Citation
Sallam MO, Soliman EA, Hassan S, El Katteb O, Sedky S (2011) 77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization. 2011 IEEE International Symposium on Antennas and Propagation (APSURSI). Available: http://dx.doi.org/10.1109/APS.2011.5996920.

Acknowledgements
This publication is based on work supported by awardnumber: UK-C0015 OUK made by King Abdullah Universityof Science and Technology (KAUST).

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
2011 IEEE International Symposium on Antennas and Propagation (APSURSI)

DOI
10.1109/APS.2011.5996920

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