4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication
Farrell, Robert M.
Oh, Sang Ho
Speck, James S.
Bowers, John E.
DenBaars, Steven P.
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AbstractWe demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.
CitationLee C, Zhang C, Cantore M, Farrell RM, Oh SH, et al. (2015) 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express 23: 16232. Available: http://dx.doi.org/10.1364/oe.23.016232.
SponsorsThe authors would like to thank Sudharsanan Srinivasan, Cedric Meyers, Ludovico Megalini, and Hyunchul Park for the meaningful discussions about measurement setup, testing, and device analysis. This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
PublisherThe Optical Society
CollectionsPublications Acknowledging KAUST Support
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