(Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells
Type
Conference PaperAuthors
Tétreault, NicolasHeiniger, L-P.
Stefik, M
Labouchère, P. L.
Arsenault, Éric
Nazeeruddin, N. K.
Ozin, G A.
Grätzel, M.
KAUST Grant Number
KUS-C1-015-21Date
2011Permanent link to this record
http://hdl.handle.net/10754/597206
Metadata
Show full item recordAbstract
Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.Citation
Tétreault N, Heiniger L-P, Stefik M, Labouchère PL, Arsenault E, et al. (2011) (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells. Available: http://dx.doi.org/10.1149/1.3633681.Sponsors
N. T. work was supported by the King Abdullah University of Science and Technology (KAUST, Award No KUS-C1-015-21). L-P. H. is supported by the Swiss National Science Foundation (Grant Nr. 200020_125163). P. L. and M.K.N work is funded by EU FP7 project “ORION” grant agreement number NMP-229036. G. A. O. is deeply indebted to the Government of Canada for a Research Chair in Materials Chemistry and Nanochemistry enabling this research at UofT. In addition he thanks the Natural Sciences and Engineering Research Council (NSERC) of Canada and the NSERC Solar Network for strong and sustained financial support of this work. E. A. thanks NSERC for a graduate scholarship.Publisher
The Electrochemical SocietyJournal
ECS Transactionsae974a485f413a2113503eed53cd6c53
10.1149/1.3633681