(Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells
Labouchère, P. L.
Nazeeruddin, N. K.
Ozin, G A.
KAUST Grant NumberKUS-C1-015-21
Permanent link to this recordhttp://hdl.handle.net/10754/597206
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AbstractHerein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.
CitationTétreault N, Heiniger L-P, Stefik M, Labouchère PL, Arsenault E, et al. (2011) (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells. Available: http://dx.doi.org/10.1149/1.3633681.
SponsorsN. T. work was supported by the King Abdullah University of Science and Technology (KAUST, Award No KUS-C1-015-21). L-P. H. is supported by the Swiss National Science Foundation (Grant Nr. 200020_125163). P. L. and M.K.N work is funded by EU FP7 project “ORION” grant agreement number NMP-229036. G. A. O. is deeply indebted to the Government of Canada for a Research Chair in Materials Chemistry and Nanochemistry enabling this research at UofT. In addition he thanks the Natural Sciences and Engineering Research Council (NSERC) of Canada and the NSERC Solar Network for strong and sustained financial support of this work. E. A. thanks NSERC for a graduate scholarship.
PublisherThe Electrochemical Society