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dc.contributor.authorHong, Seung Sae
dc.contributor.authorCha, Judy J.
dc.contributor.authorKong, Desheng
dc.contributor.authorCui, Yi
dc.date.accessioned2016-02-23T13:52:38Z
dc.date.available2016-02-23T13:52:38Z
dc.date.issued2012-03-27
dc.identifier.citationHong SS, Cha JJ, Kong D, Cui Y (2012) Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons. Nat Comms 3: 757. Available: http://dx.doi.org/10.1038/ncomms1771.
dc.identifier.issn2041-1723
dc.identifier.pmid22453830
dc.identifier.doi10.1038/ncomms1771
dc.identifier.urihttp://hdl.handle.net/10754/597020
dc.description.abstractA topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.
dc.description.sponsorshipWe thank K. Lai and J. R. Williams for the helpful discussions, and B. Weil for the help in the manuscript preparation. Y. C. acknowledges the supports from the Keck Foundation, DARPA MESO project (No. N66001-11-1-4105) and the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12).
dc.publisherSpringer Nature
dc.rightsOpen access articles are published under a CC BY license (Creative Commons Attribution 4.0 International License).
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleUltra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons
dc.typeArticle
dc.identifier.journalNature Communications
dc.contributor.institutionStanford University, Palo Alto, United States
dc.contributor.institutionStanford University, Palo Alto, United States
dc.contributor.institutionStanford Linear Accelerator Center, Menlo Park, United States
kaust.grant.numberKUS-l1-001-12
refterms.dateFOA2018-06-13T15:29:43Z


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Open access articles are published under a CC BY license (Creative Commons Attribution 4.0 International License).
Except where otherwise noted, this item's license is described as Open access articles are published under a CC BY license (Creative Commons Attribution 4.0 International License).