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    Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment

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    Type
    Article
    Authors
    Han, Hau-Vei
    Lu, Ang-Yu
    Lu, Li-Syuan
    Huang, Jing-Kai
    Li, Henan
    Hsu, Chang-Lung
    Lin, Yung-Chang
    Chiu, Ming-Hui cc
    Suenaga, Kazu
    Chu, Chih-Wei
    Kuo, Hao-Chung
    Chang, Wen-Hao cc
    Li, Lain-Jong cc
    Shi, Yumeng
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2016-01-05
    Online Publication Date
    2016-01-05
    Print Publication Date
    2016-01-26
    Permanent link to this record
    http://hdl.handle.net/10754/596857
    
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    Abstract
    Atomically thin two-dimensional transition-metal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-to-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.
    Citation
    Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment 2016, 10 (1):1454 ACS Nano
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Nano
    DOI
    10.1021/acsnano.5b06960
    PubMed ID
    26716765
    Additional Links
    http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06960
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsnano.5b06960
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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