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dc.contributor.authorKosel, Jürgen
dc.contributor.authorSun, Jian
dc.date.accessioned2016-02-04T13:42:12Z
dc.date.available2016-02-04T13:42:12Z
dc.date.issued2015-10-20
dc.date.submitted2011-07-20
dc.identifier.urihttp://hdl.handle.net/10754/595590
dc.description.abstractMagnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
dc.relation.urlhttp://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9164153
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=patNum:9164153
dc.relation.urlhttp://www.google.com/patents/US9164153
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=9164153B2&KC=B2&FT=D
dc.titleMethods and apparatuses for low-noise magnetic sensors
dc.typePatent
dc.contributor.departmentElectrical Engineering Program
dc.description.statusGranted Patent
dc.contributor.assigneeKing Abdullah University of Science and Technology
dc.description.countryUnited States
dc.identifier.patentnumberUS 9164153 B2
dc.identifier.applicationnumberUS 20120038356 A1
dc.identifier.uspatentnumber9164153
refterms.dateFOA2018-06-13T11:57:34Z


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