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dc.contributor.authorElafandy, Rami Tarek Mahmoud
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2016-02-04T13:33:55Z
dc.date.available2016-02-04T13:33:55Z
dc.date.issued2016-01-28
dc.date.submitted2015-09-11
dc.identifier.urihttp://hdl.handle.net/10754/595585
dc.description.abstractA gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
dc.relation.urlhttp://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220160027656%22.PGNR.&OS=DN/20160027656&RS=DN/20160027656
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=publNum:20160027656
dc.relation.urlhttp://www.google.com/patents/US20160027656
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2016027656A1&KC=A1&FT=D
dc.titleDefect free single crystal thin layer
dc.typePatent
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.description.statusPublished Application
dc.contributor.assigneeKing Abdullah University of Science and Technology
dc.description.countryUnited States
dc.identifier.applicationnumberUS 20160027656 A1
refterms.dateFOA2018-06-13T11:57:40Z


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