Defect free single crystal thin layer

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Type
Patent
Patent Status
Published Application
Authors
Elafandy, Rami Tarek Mahmoud
Ooi, Boon S. cc
Assignee
King Abdullah University of Science and Technology
KAUST Department
Electrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2016-01-28
Submitted Date
2015-09-11
Permanent link to this record
http://hdl.handle.net/10754/595585

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Abstract
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
Application Number
US 20160027656 A1
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Patents; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division