Methods and devices for silicon integrated vertically aligned field effect transistors

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Type
Patent
Patent Status
Granted Patent
Authors
Li, Jingqi
Assignee
King Abdullah University of Science and Technology
KAUST Department
Advanced Nanofabrication and Thin Film Core Lab
Date
2015-11-19
Submitted Date
2015-05-13
Permanent link to this record
http://hdl.handle.net/10754/595584

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Abstract
Embodiments of the present disclosure provide for vertically aligned CNTFET, methods of making vertically aligned CNTFET, methods of using vertically aligned CNTFET, and the like.
Patent Number
US9318718B2
Application Number
US 20150333282 A1
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