Type
PatentPatent Status
Granted PatentKAUST Department
Electrical Engineering ProgramDate
2014-08-28Submitted Date
2014-04-02Permanent link to this record
http://hdl.handle.net/10754/595312
Metadata
Show full item recordAbstract
A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.Patent Number
US9520293B2Application Number
US 20140239459 A1Additional Links
http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140239459%22.PGNR.&OS=DN/20140239459&RS=DN/20140239459http://assignment.uspto.gov/#/search?adv=publNum:20140239459
http://www.google.com/patents/US20140239459
http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014239459A1&KC=A1&FT=D