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dc.contributor.authorDevi, Assa Aravindh Sasikala
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2016-01-26T10:23:14Z
dc.date.available2016-01-26T10:23:14Z
dc.date.issued2015-12-14
dc.identifier.citationDefect-impurity complex induced long-range ferromagnetism in GaN nanowires 2015, 2 (12):126104 Materials Research Express
dc.identifier.issn2053-1591
dc.identifier.doi10.1088/2053-1591/2/12/126104
dc.identifier.urihttp://hdl.handle.net/10754/594842
dc.description.abstractPresent work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.
dc.language.isoen
dc.publisherIOP Publishing
dc.relation.urlhttp://stacks.iop.org/2053-1591/2/i=12/a=126104?key=crossref.a2bd549580914f18a691edaaf50a7c59
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. http://creativecommons.org/licenses/by/3.0
dc.titleDefect-impurity complex induced long-range ferromagnetism in GaN nanowires
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalMaterials Research Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.arxivid1511.01991
kaust.personDevi, Assa Aravindh Sasikala
kaust.personRoqan, Iman S.
refterms.dateFOA2018-06-13T13:45:28Z


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