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dc.contributor.authorZhang, Chendong
dc.contributor.authorChen, Yuxuan
dc.contributor.authorHuang, Jing-Kai
dc.contributor.authorWu, Xianxin
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorYao, Wang
dc.contributor.authorTersoff, Jerry
dc.contributor.authorShih, Chih-Kang
dc.date.accessioned2016-01-19T15:07:12Z
dc.date.available2016-01-19T15:07:12Z
dc.date.issued2016-01-18
dc.identifier.citationVisualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction 2016, 6:10349 Nature Communications
dc.identifier.issn2041-1723
dc.identifier.pmid26778119
dc.identifier.doi10.1038/ncomms10349
dc.identifier.urihttp://hdl.handle.net/10754/594361
dc.description.abstractSemiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer–monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer–monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.
dc.language.isoen
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms10349
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.titleVisualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, Texas 78712, USA
dc.contributor.institutionDepartment of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China
dc.contributor.institutionInstitute of Physics, Chinese Academy of Sciences, Beijing 100190, China
dc.contributor.institutionIBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.arxividarXiv:1512.01707
kaust.personHuang, Jing-Kai
kaust.personLi, Lain-Jong
refterms.dateFOA2018-06-13T13:37:24Z
dc.date.published-online2016-01-18
dc.date.published-print2016-04


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