Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering
Type
Conference PaperKAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Thermal & Deposition
Date
2015-04-15Online Publication Date
2015-04-15Print Publication Date
2015Permanent link to this record
http://hdl.handle.net/10754/594248
Metadata
Show full item recordAbstract
Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.Citation
Haider MB, Al-Kuhaili MF, Durrani SMA, Singaravelu V, Roqan I (2015) Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering. MRS Proceedings 1731. Available: http://dx.doi.org/10.1557/opl.2015.355.Publisher
Cambridge University Press (CUP)Journal
MRS ProceedingsConference/Event name
2014 MRS Fall Meetingae974a485f413a2113503eed53cd6c53
10.1557/opl.2015.355