Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Thermal & Deposition
Online Publication Date2015-04-15
Print Publication Date2015
Permanent link to this recordhttp://hdl.handle.net/10754/594248
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AbstractThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.
CitationHaider MB, Al-Kuhaili MF, Durrani SMA, Singaravelu V, Roqan I (2015) Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering. MRS Proceedings 1731. Available: http://dx.doi.org/10.1557/opl.2015.355.
PublisherCambridge University Press (CUP)
Conference/Event name2014 MRS Fall Meeting