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    High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

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    Type
    Article
    Authors
    Torres, Carlos M.
    Lan, Yann Wen
    Zeng, Caifu
    Chen, Jyun Hong
    Kou, Xufeng
    Navabi, Aryan
    Tang, Jianshi
    Montazeri, Mohammad
    Adleman, James R.
    Lerner, Mitchell B.
    Zhong, Yuan Liang
    Li, Lain-Jong cc
    Chen, Chii Dong
    Wang, Kang L.
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2015-11-06
    Online Publication Date
    2015-11-06
    Print Publication Date
    2015-12-09
    Permanent link to this record
    http://hdl.handle.net/10754/594246
    
    Metadata
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    Abstract
    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.
    Citation
    Torres CM, Lan Y-W, Zeng C, Chen J-H, Kou X, et al. (2015) High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors . Nano Lett 15: 7905–7912. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03768.
    Sponsors
    National Science Council[NSC 103-2917-I-564-017]
    U.S. Department of Defense
    Division of Emerging Frontiers in Research and Innovation[EFRI-1433541]
    Publisher
    American Chemical Society (ACS)
    Journal
    Nano Letters
    DOI
    10.1021/acs.nanolett.5b03768
    PubMed ID
    26524388
    Additional Links
    http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03768
    ae974a485f413a2113503eed53cd6c53
    10.1021/acs.nanolett.5b03768
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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