High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors
Type
ArticleAuthors
Torres, Carlos M.Lan, Yann Wen
Zeng, Caifu
Chen, Jyun Hong
Kou, Xufeng
Navabi, Aryan
Tang, Jianshi
Montazeri, Mohammad
Adleman, James R.
Lerner, Mitchell B.
Zhong, Yuan Liang
Li, Lain-Jong

Chen, Chii Dong
Wang, Kang L.
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2015-11-06Online Publication Date
2015-11-06Print Publication Date
2015-12-09Permanent link to this record
http://hdl.handle.net/10754/594246
Metadata
Show full item recordAbstract
The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.Citation
Torres CM, Lan Y-W, Zeng C, Chen J-H, Kou X, et al. (2015) High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors . Nano Lett 15: 7905–7912. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03768.Sponsors
National Science Council[NSC 103-2917-I-564-017]U.S. Department of Defense
Division of Emerging Frontiers in Research and Innovation[EFRI-1433541]
Publisher
American Chemical Society (ACS)Journal
Nano LettersPubMed ID
26524388Additional Links
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03768ae974a485f413a2113503eed53cd6c53
10.1021/acs.nanolett.5b03768
Scopus Count
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