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dc.contributor.authorChen, Min Cheng
dc.contributor.authorLin, Chia Yi
dc.contributor.authorLi, Kai Hsin
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorChen, Chang Hsiao
dc.contributor.authorChuang, Cheng Hao
dc.contributor.authorLee, Ming Dao
dc.contributor.authorChen, Yi Ju
dc.contributor.authorHou, Yun Fang
dc.contributor.authorLin, Chang Hsien
dc.contributor.authorChen, Chun Chi
dc.contributor.authorWu, Bo Wei
dc.contributor.authorWu, Cheng San
dc.contributor.authorYang, Ivy
dc.contributor.authorLee, Yao Jen
dc.contributor.authorYeh, Wen Kuan
dc.contributor.authorWang, Tahui
dc.contributor.authorYang, Fu Liang
dc.contributor.authorHu, Chenming
dc.date.accessioned2016-01-19T14:43:21Z
dc.date.available2016-01-19T14:43:21Z
dc.date.issued2014-12
dc.identifier.citationChen M-C, Lin C-Y, Kai-Hsin Li, Li L-J, Chen C-H, et al. (2014) Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs. 2014 IEEE International Electron Devices Meeting. Available: http://dx.doi.org/10.1109/iedm.2014.7047163.
dc.identifier.doi10.1109/iedm.2014.7047163
dc.identifier.urihttp://hdl.handle.net/10754/594212
dc.description.abstractStackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleHybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs
dc.typeConference Paper
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2014 IEEE International Electron Devices Meeting
dc.conference.date15 December 2014 through 17 December 2014
dc.conference.name2014 60th IEEE International Electron Devices Meeting, IEDM 2014
dc.contributor.institutionNational Nano Device Laboratories, National Applied Research Laboratories, Taiwan
dc.contributor.institutionDept. of Phys., Tamkang University, Taiwan
dc.contributor.institutionDept. of Electronics Eng., National Chiao-Tung University, Taiwan
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taiwan
dc.contributor.institutionDept. of Electrical Eng. and Computer Science, University of California, Berkeley, United States
kaust.personLi, Lain-Jong
kaust.personChen, Chang Hsiao


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