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dc.contributor.authorChen, Min Cheng*
dc.contributor.authorLin, Chia Yi*
dc.contributor.authorLi, Kai Hsin*
dc.contributor.authorLi, Lain-Jong*
dc.contributor.authorChen, Chang Hsiao*
dc.contributor.authorChuang, Cheng Hao*
dc.contributor.authorLee, Ming Dao*
dc.contributor.authorChen, Yi Ju*
dc.contributor.authorHou, Yun Fang*
dc.contributor.authorLin, Chang Hsien*
dc.contributor.authorChen, Chun Chi*
dc.contributor.authorWu, Bo Wei*
dc.contributor.authorWu, Cheng San*
dc.contributor.authorYang, Ivy*
dc.contributor.authorLee, Yao Jen*
dc.contributor.authorYeh, Wen Kuan*
dc.contributor.authorWang, Tahui*
dc.contributor.authorYang, Fu Liang*
dc.contributor.authorHu, Chenming*
dc.date.accessioned2016-01-19T14:43:21Zen
dc.date.available2016-01-19T14:43:21Zen
dc.date.issued2014-12en
dc.identifier.citationChen M-C, Lin C-Y, Kai-Hsin Li, Li L-J, Chen C-H, et al. (2014) Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs. 2014 IEEE International Electron Devices Meeting. Available: http://dx.doi.org/10.1109/iedm.2014.7047163.en
dc.identifier.doi10.1109/iedm.2014.7047163en
dc.identifier.urihttp://hdl.handle.net/10754/594212en
dc.description.abstractStackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleHybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division*
dc.identifier.journal2014 IEEE International Electron Devices Meetingen
dc.conference.date15 December 2014 through 17 December 2014en
dc.conference.name2014 60th IEEE International Electron Devices Meeting, IEDM 2014en
dc.contributor.institutionNational Nano Device Laboratories, National Applied Research Laboratories, Taiwan*
dc.contributor.institutionDept. of Phys., Tamkang University, Taiwan*
dc.contributor.institutionDept. of Electronics Eng., National Chiao-Tung University, Taiwan*
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taiwan*
dc.contributor.institutionDept. of Electrical Eng. and Computer Science, University of California, Berkeley, United States*
kaust.authorLi, Lain-Jong*
kaust.authorChen, Chang Hsiao*


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