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dc.contributor.authorHus, Jui Wei
dc.contributor.authorChen, Chien Chia
dc.contributor.authorLee, Ming Jui
dc.contributor.authorLiu, Hsueh Hsing
dc.contributor.authorChyi, Jen Inn
dc.contributor.authorHuang, Michael R S
dc.contributor.authorLiu, Chuan Pu
dc.contributor.authorWei, Tzu Chiao
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorLai, Kun Yu
dc.date.accessioned2016-01-19T13:23:42Z
dc.date.available2016-01-19T13:23:42Z
dc.date.issued2015-07-15
dc.identifier.citationHus J-W, Chen C-C, Lee M-J, Liu H-H, Chyi J-I, et al. (2015) Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. Advanced Materials 27: 4845–4850. Available: http://dx.doi.org/10.1002/adma.201501538.
dc.identifier.issn0935-9648
dc.identifier.pmid26178685
dc.identifier.doi10.1002/adma.201501538
dc.identifier.urihttp://hdl.handle.net/10754/594200
dc.description.abstractSemipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.publisherWiley-Blackwell
dc.subjectGaN
dc.subjectnano-heteroepitaxy
dc.subjectquantum well
dc.subjectsemipolar
dc.subjectSi substrate
dc.titleBottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalAdvanced Materials
dc.contributor.institutionDepartment of Optics and Photonics; National Central University; Chung-Li 320 Taiwan
dc.contributor.institutionDepartment of Electrical Engineering; National Central University; Chung-Li 320 Taiwan
dc.contributor.institutionDepartment of Materials Science and Engineering; National Cheng Kung University; Tainan 701 Taiwan
dc.contributor.institutionInstitute of Photonics and Optoelectronics; National Taiwan University; Taipei 106 Taiwan
kaust.personHe, Jr-Hau


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