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dc.contributor.authorAddou, Rafik
dc.contributor.authorMcDonnell, Stephen
dc.contributor.authorBarrera, Diego
dc.contributor.authorGuo, Zaibing
dc.contributor.authorAzcatl, Angelica
dc.contributor.authorWang, Jian
dc.contributor.authorZhu, Hui
dc.contributor.authorHinkle, Christopher L.
dc.contributor.authorQuevedo-Lopez, Manuel A.
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorColombo, Luigi
dc.contributor.authorHsu, Julia W P
dc.contributor.authorWallace, Robert M.
dc.date.accessioned2016-01-19T13:23:40Z
dc.date.available2016-01-19T13:23:40Z
dc.date.issued2015-08-27
dc.identifier.citationAddou R, McDonnell S, Barrera D, Guo Z, Azcatl A, et al. (2015) Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces . ACS Nano 9: 9124–9133. Available: http://dx.doi.org/10.1021/acsnano.5b03309.
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid26301428
dc.identifier.doi10.1021/acsnano.5b03309
dc.identifier.urihttp://hdl.handle.net/10754/594198
dc.description.abstractRoom temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnología[NL-2010-C33-149216]
dc.description.sponsorshipDivision of Electrical, Communications and Cyber Systems[ECCS-1407765]
dc.description.sponsorshipSemiconductor Research Corporation
dc.description.sponsorshipDefense Advanced Research Projects Agency
dc.description.sponsorshipMicroelectronics Advanced Research Corporation
dc.description.sponsorshipTexas Instruments Distinguished Chair in Nanoelectronics, University of Texas at Dallas
dc.description.sponsorshipCenter for Low Energy Systems Technology, University of Notre Dame
dc.publisherAmerican Chemical Society (ACS)
dc.subjectelectron affinity
dc.subjectFermi level shift
dc.subjectimpurities
dc.subjectMoS<inf>2</inf>
dc.subjectscanning tunneling microscopy
dc.subjectsurface defects
dc.subjectwork function
dc.subjectX-ray photoelectron spectroscopy
dc.titleImpurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, 800 Campbell Road, Richardson, TX, United States
dc.contributor.institutionCentro de Investigación en Materiales Avanzados, S.C. (CIMAV), Unidad Monterrey, Alianza Norte 202, Apodaca, Nuevo León, Mexico
dc.contributor.institutionTexas Instruments Incorporated, MS-365, 13121 TI Boulevard, Dallasa, TX, United States
kaust.personGuo, Zaibing
kaust.personAlshareef, Husam N.
dc.date.published-online2015-08-27
dc.date.published-print2015-09-22


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